高密度chainFeRAM的位线/板线参考级预充方案

2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408) Pub Date : 2003-06-12 DOI:10.1109/VLSIC.2003.1221191

K. Oikawa, D. Takashima, S. Shiratake, K. Hoya, H. Joachim

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引用次数: 1

摘要

本文提出了一种新的32mb chainFeRAM位线/板线操作方案，克服了这两个问题，同时也克服了FeRAM采用接地位线预充电方案导致阵列电流过大的问题。

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Bitline/plateline reference-level-precharge scheme for high-density chainFeRAM

This paper proposes the new bitline/plateline operation scheme for 32 Mb chainFeRAM, which overcomes these two problems and also overcomes the problem of large array current due to the grounded bitline precharge scheme used for FeRAM.

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2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408)

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