一个4mb的MRAM宏,包括共享写选择晶体管单元,并使用泄漏复制读取方案

R. Nebashi, N. Sakimura, T. Sugibayashi, N. Kasai
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引用次数: 4

摘要

我们提出了一种用于soc的MRAM宏观架构,以减小其面积大小。共享写选择晶体管(SWST)架构基于2T1MTJ MRAM单元技术,它可以实现与6T sram相同的快速访问时间,并且单元面积更小。我们使用SWST架构设计了一个4mb宏,采用0.15 μ m CMOS工艺和0.24 μ m MRAM工艺。宏单元数组由81T64MTJ单元数组元素组成,每个单元数组元素存储64条数据。面积缩小30%以上。通过引入泄漏复制(LR)读取方案,SPICE仿真实现了50ns的访问时间。2T1MTJ宏和81T64MTJ宏可以集成到一个SoC中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 4-Mb MRAM macro comprising shared write-selection transistor cells and using a leakage-replication read scheme
We propose an MRAM macro architecture for SoCs to reduce their area size. The .shared write-selection transistor (SWST) architecture is based on 2T1MTJ MRAM cell technology', which enables the same fast access time as and with smaller cell area than that of 6T SRAMs. We designed a 4-Mb macro using the SWST architecture with a 0.15-mum CMOS process and a 0.24-mum MRAM process. The macro cell array consists of 81T64MTJ cell array elements, each storing 64 hits of data. Area size is reduced by more than 30%. By introducing a leakage-replication (LR) read scheme, 50-ns access time is achieved with SPICE simulation. The 2T1MTJ macro and 81T64MTJ macro can be integrated into a single SoC.
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