电荷泵与低电流失配锁相环应用

D. Biswas
{"title":"电荷泵与低电流失配锁相环应用","authors":"D. Biswas","doi":"10.1109/CONECCT52877.2021.9622662","DOIUrl":null,"url":null,"abstract":"A new error amplifier based charge pump (CP) is proposed. The mismatch current is directed through a high value resistor, and the voltage developed across it is minimized by error amplifier feedback. The loop gain is dependent on the value of the resistor and can be made comparable to conventional error amplifier based CPs. A residual error remains due to finite offset voltages at the branch outputs. This mismatch current is further lowered by dynamically comparing the up and down currents through a clocked comparator and equating the branch output voltages. Simulation results are carried out in 180 nm CMOS technology.","PeriodicalId":164499,"journal":{"name":"2021 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Charge Pump with Low Current Mismatch for PLL Applications\",\"authors\":\"D. Biswas\",\"doi\":\"10.1109/CONECCT52877.2021.9622662\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new error amplifier based charge pump (CP) is proposed. The mismatch current is directed through a high value resistor, and the voltage developed across it is minimized by error amplifier feedback. The loop gain is dependent on the value of the resistor and can be made comparable to conventional error amplifier based CPs. A residual error remains due to finite offset voltages at the branch outputs. This mismatch current is further lowered by dynamically comparing the up and down currents through a clocked comparator and equating the branch output voltages. Simulation results are carried out in 180 nm CMOS technology.\",\"PeriodicalId\":164499,\"journal\":{\"name\":\"2021 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-07-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CONECCT52877.2021.9622662\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CONECCT52877.2021.9622662","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

提出了一种基于误差放大器的电荷泵。失配电流通过一个高值电阻器,通过误差放大器反馈使其产生的电压最小。环路增益取决于电阻器的值,可以与基于CPs的传统误差放大器相媲美。由于支路输出的偏置电压有限,残余误差仍然存在。通过一个带时钟的比较器动态比较上下电流,并使支路输出电压相等,进一步降低了这种不匹配电流。仿真结果在180nm CMOS工艺下进行。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Charge Pump with Low Current Mismatch for PLL Applications
A new error amplifier based charge pump (CP) is proposed. The mismatch current is directed through a high value resistor, and the voltage developed across it is minimized by error amplifier feedback. The loop gain is dependent on the value of the resistor and can be made comparable to conventional error amplifier based CPs. A residual error remains due to finite offset voltages at the branch outputs. This mismatch current is further lowered by dynamically comparing the up and down currents through a clocked comparator and equating the branch output voltages. Simulation results are carried out in 180 nm CMOS technology.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信