{"title":"沟槽MOSFET制造技术中硅深各向异性刻蚀的特点","authors":"A. E. Anurov, Yu. M. Zabotin, S. G. Podgorodetsky","doi":"10.17238/ISSN2409-0239.2015.4.66","DOIUrl":null,"url":null,"abstract":"Operation of gate trench etching for vertical power MOSFET manufacturing technology is considered and investigation results are shown as dependences of trench geometry from etch parameters and as parameters of the final etch regime in this paper. It is shown that gas flows’ proportional change has a little effect on the etch regime and the trench form, and etch time to deposition time ratio has a strong influence on the wall slope and the bottom roughness.","PeriodicalId":436954,"journal":{"name":"Rocket-Space Device Engineering and Information Systems","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Specifics of Silicon Deep Anisotropic Etching in Trench MOSFET Manufacturing Technology\",\"authors\":\"A. E. Anurov, Yu. M. Zabotin, S. G. Podgorodetsky\",\"doi\":\"10.17238/ISSN2409-0239.2015.4.66\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Operation of gate trench etching for vertical power MOSFET manufacturing technology is considered and investigation results are shown as dependences of trench geometry from etch parameters and as parameters of the final etch regime in this paper. It is shown that gas flows’ proportional change has a little effect on the etch regime and the trench form, and etch time to deposition time ratio has a strong influence on the wall slope and the bottom roughness.\",\"PeriodicalId\":436954,\"journal\":{\"name\":\"Rocket-Space Device Engineering and Information Systems\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Rocket-Space Device Engineering and Information Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.17238/ISSN2409-0239.2015.4.66\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Rocket-Space Device Engineering and Information Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.17238/ISSN2409-0239.2015.4.66","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Specifics of Silicon Deep Anisotropic Etching in Trench MOSFET Manufacturing Technology
Operation of gate trench etching for vertical power MOSFET manufacturing technology is considered and investigation results are shown as dependences of trench geometry from etch parameters and as parameters of the final etch regime in this paper. It is shown that gas flows’ proportional change has a little effect on the etch regime and the trench form, and etch time to deposition time ratio has a strong influence on the wall slope and the bottom roughness.
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