T. Dutta, Q. Rafhay, R. Clerc, J. Lacord, S. Monfray, G. Pananakakis, F. Boeuf, G. Ghibaudo
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Origins of the short channel effects increase in III-V nMOSFET technologies
This paper investigates the different mechanisms responsible for the increase of short channel effects in III-V MOSFETs. As expected, the first origin of this increase is due to the higher dielectric constant of III-V semiconductors. The second is due to their small density of states, which induces larger DIBL, but only in the strong inversion regime, due to larger dark space. Finally, barrier layers, used in the Quantum Well FET architecture, are shown to cause additional DIBL increase.
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