采用0.13μm SiGe BiCMOS技术的5 ~ 14GHz宽带LNA

2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) Pub Date : 2018-11-01 DOI:10.1109/CICTA.2018.8705956

Weipeng He, Zhiqun Li, Yan Yao, Yongbin Xue, Lei Luo, Guoxiao Cheng

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引用次数: 0

摘要

提出了一种基于0.13 μm SiGe BiCMOS技术的宽带低噪声放大器(LNA)。采用感应调峰技术扩大带宽，采用电阻负反馈技术和发射极退化感应技术提高增益平整度和输入匹配度。该LNA在$5\sim $ 14$ GHz频率范围内实现了10.7 ~ 12.9 dB的平坦增益。LNA的噪声系数$(NF)$在整个频段内为3.5 ~ 6.1 dB。LNA的输入返回损耗(S11)优于-10 dB。LNA的功耗为9.4mA，电源为3.3 V。

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A 5 ∼14GHz Wideband LNA using 0.13μm SiGe BiCMOS Technology

A Wideband low-noise amplifier (LNA) designed and implemented in 0.13 μm SiGe BiCMOS technology is presented in this paper. The inductive peaking technology is adopted to expand the bandwidth, the resistance negative feedback technology and the emitter degeneration inductive technology are adopted to improve the flatness of gain and input matching. This LNA achieves a flat gain of 10.7∼ 12.9 dB in the frequency range of $5\sim 14$ GHz. The noise figure $(NF)$ of the LNA is 3.5∼ 6.1 dB across the band. The input return losses (S11) of the LNA are better than -10 dB. The LNA dissipates 9.4mA with a 3.3 V supply.

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2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)

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