Photo electromotive force induced by running fringes for determination of ion mobility in perovskite semiconductors

We have demonstrated theoretically and experimentally that the current induced by an interference pattern moving at constant velocity can be used to determine the ion mobility and activation energy in perovskite semiconductors. The frequency dependence of the signal has features predicted by theory: the high-frequency peak corresponds to the electron/hole photoconductivity relaxation process, and the low-frequency peak occurs when the velocity of the interference pattern synchronizes with the ion motion; by determining the peak’s position, it becomes possible to estimate the ion mobility. The values of ion mobility and activation energy agree with the data reported in the literature.