基于富Al AlGaN的单晶AlN太阳盲性和室温操作apd

2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID) Pub Date : 2019-08-01 DOI:10.1109/RAPID.2019.8864417

P. Reddy, M. H. Breckenridge, A. Klump, Q. Guo, S. Mita, B. Sarkar, R. Kirste, B. Moody, J. Tweedie, R. Collazo, Z. Sitar

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引用次数: 2

摘要

我们展示了在AlN衬底上生长的富Al AlGaN型apd，在室温下具有高灵敏度和环境光抑制能力，显示了其优于Si和Ge基探测器的优势。apd工作在线性增益区域，最大增益超过1100。

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Al Rich AlGaN Based APDs on Single Crystal AlN with Solar Blindness and Room Temperature Operation

We demonstrate Al rich AlGaN based APDs grown on AlN substrates capable of high sensitivity at room temperature with ambient lighting rejection showcasing the advantage over Si and Ge based detectors. APDs are operated in linear gain region with maximum gain exceeding 1100.

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2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID)

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