通过注入锁定超高Q氮化硅微谐振器的赫兹级线宽半导体激光器

2021 Conference on Lasers and Electro-Optics (CLEO) Pub Date : 2021-05-01 DOI:10.1364/cleo_si.2021.sm1a.2

W. Jin, Qifan Yang, L. Chang, B. Shen, Heming Wang, M. A. Leal, Lue Wu, Maodong Gao, Avi Feshali, M. Paniccia, K. Vahala, J. Bowers

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引用次数: 0

摘要

传统半导体DFB激光器自注入锁定在cmos代工制造的超高Q氮化硅微谐振器上，将高偏置频率噪声抑制到0.2 Hz2 Hz-1，产生1.2 Hz的瞬时线宽。

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Hertz-level-linewidth semiconductor laser via injection locking to an ultra-high Q silicon nitride microresonator

A conventional semiconductor DFB laser is self-injection-locked to a CMOS-foundryfabricated ultra-high Q silicon nitride microresonator, suppressing high-offset frequency noise to 0.2 Hz2 Hz-1 and yielding instantaneous linewidth of 1.2 Hz.

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来源期刊

2021 Conference on Lasers and Electro-Optics (CLEO)

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