BiFeO3薄膜的制备、表征及其在光伏器件中的应用

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-08-04 DOI:10.1109/ICIPRM.2016.7528694

Y. Shirahata, A. Suzuki, T. Oku

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引用次数: 0

摘要

采用简单的旋涂法制备了铋铁氧体(BiFeO3)薄膜。通过x射线衍射证实了多晶BiFeO3薄膜的存在。随着BiFeO3前驱体溶液浓度的增加，BiFeO3薄膜的晶格常数和晶粒尺寸增大。制备了BiFeO3/CH3NH3PbI3光伏器件，对其光伏性能进行了表征。光电器件的电流密度-电压特性表现出整流行为，表明BiFeO3层起到了电子输运层的作用。

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Fabrication and characterization of BiFeO3 thin films and application for photovoltaic devices

Bismuth ferrite (BiFeO₃) thin films were fabricated by a simple spin-coating method. Polycrystalline BiFeO₃ thin films were confirmed by X-ray diffraction. Lattice constants and crystallite sizes of the BiFeO₃ thin films increased with increasing concentration of BiFeO₃ precursor solution. BiFeO₃/CH₃NH₃PbI₃ photovoltaic devices were fabricated to characterize photovoltaic properties. Current density-voltage characteristics of the photovoltaic devices exhibited rectifying behaviors, indicating that BiFeO₃ layer acted an electron transport layer.

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2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)

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