F. Sizov, V. Dobrovolski, Z. Tsybrii, V. Zabudsky, S. Dvoretskii, N. Mikhailov
{"title":"窄间隙MCT作为太赫兹探测器","authors":"F. Sizov, V. Dobrovolski, Z. Tsybrii, V. Zabudsky, S. Dvoretskii, N. Mikhailov","doi":"10.1109/MIKON.2016.7492016","DOIUrl":null,"url":null,"abstract":"Direct detection mm/sub-mm wave warm-carrier bipolar narrow-gap Hg1−xCdxTe semiconductor bolometers that can be used as sensitive elements in THz sensitive arrays, are considered. The response of Hg1−xCdxTe warm-electron bolometer was measured in ν=0.037−1.54 THz frequency range at T=68-300 K. In the detector (bolometer) considered the electromagnetic wave heats electrons and holes there, creates their excess concentrations, as well as, the electromotive force. These effects cause the bolometer response voltage. The noise equivalent power can reach NEP300K∼2.5×10−10 W/Hz1/2 at radiation frequency ν=140 GHz.","PeriodicalId":354299,"journal":{"name":"2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Narrow-gap MCT as THz detector\",\"authors\":\"F. Sizov, V. Dobrovolski, Z. Tsybrii, V. Zabudsky, S. Dvoretskii, N. Mikhailov\",\"doi\":\"10.1109/MIKON.2016.7492016\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Direct detection mm/sub-mm wave warm-carrier bipolar narrow-gap Hg1−xCdxTe semiconductor bolometers that can be used as sensitive elements in THz sensitive arrays, are considered. The response of Hg1−xCdxTe warm-electron bolometer was measured in ν=0.037−1.54 THz frequency range at T=68-300 K. In the detector (bolometer) considered the electromagnetic wave heats electrons and holes there, creates their excess concentrations, as well as, the electromotive force. These effects cause the bolometer response voltage. The noise equivalent power can reach NEP300K∼2.5×10−10 W/Hz1/2 at radiation frequency ν=140 GHz.\",\"PeriodicalId\":354299,\"journal\":{\"name\":\"2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIKON.2016.7492016\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIKON.2016.7492016","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Direct detection mm/sub-mm wave warm-carrier bipolar narrow-gap Hg1−xCdxTe semiconductor bolometers that can be used as sensitive elements in THz sensitive arrays, are considered. The response of Hg1−xCdxTe warm-electron bolometer was measured in ν=0.037−1.54 THz frequency range at T=68-300 K. In the detector (bolometer) considered the electromagnetic wave heats electrons and holes there, creates their excess concentrations, as well as, the electromotive force. These effects cause the bolometer response voltage. The noise equivalent power can reach NEP300K∼2.5×10−10 W/Hz1/2 at radiation frequency ν=140 GHz.