磁隧道结中CoFeB钉住层Al/sub 2/O/sub 3/势垒的特性

INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005. Pub Date : 2005-10-17 DOI:10.1109/INTMAG.2005.1464450

J. Bae, W. C. Lim, Tae Wan Kim, T. Lee

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引用次数: 3

摘要

在MTJs中加入非晶调频电极CoFeB，以改善绝缘层界面的性能。在直流磁控溅射系统中制备了具有Ta(50 nm)/NiFe(8 nm)/IrMn(10 nm)/钉住层(4 nm)/Al/sub 2/O/sub 3/(Al 1.1 nm)/CoFeB(3 nm)/NiFe(15 nm)结构的隧道结。采用光刻法制备结，并将样品从200 ~ 340℃退火。利用XPS和SIMS对退火前后的绝缘阻挡层深度分布进行了分析。在退火温度下测量了MTJs的MR比和结电阻(RA)产物。在260 /spl℃退火时，磁流变率达到最大值。CoFeB钉钉结的RA产物最高可达380 /spl℃，而CoFe钉钉层隧道结的RA产物最高可达280 /spl℃，在此温度范围内RA产物有所降低。

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Characteristics of the Al/sub 2/O/sub 3/ barrier with CoFeB pinned layer in magnetic tunnel junctions

Amorphous FM electrode, CoFeB, was used in MTJs to improve the property of the insulating layer interface. The tunnel junctions with a structure of Ta(50 nm)/NiFe(8 nm)/IrMn(10 nm)/pinned layer(4 nm)/Al/sub 2/O/sub 3/(Al 1.1 nm)/CoFeB(3 nm)/NiFe(15 nm) were prepared in a DC magnetron sputtering system. The junctions were made by a photolithographic method and the samples were annealed from 200 /spl deg/C to 340 /spl deg/C. The depth profiles of the insulating barrier before and after annealing were analyzed by XPS and SIMS. MR ratio and junction resistance (RA) products of the MTJs were measured with annealing temperature. The maximum MR ratio were observed at 260 /spl deg/C annealing. RA products increased up to 380 /spl deg/C for CoFeB pinned junctions while it increased up to a 280 /spl deg/C and decreased over this temperature in the tunnel junctions with CoFe pinned layer.

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来源期刊

INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005.

CiteScore

0.50

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0.00%

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