沟槽法制备InP - Gunn器件的工艺改进

2008 Global Symposium on Millimeter Waves Pub Date : 2008-04-21 DOI:10.1109/GSMM.2008.4534546

Minkyoung Kim, Sung-Dae Lee, Jae Seok Lee, N. Kwak, Sam Dong Kim, Jin-Koo Rhee

{"title":"沟槽法制备InP - Gunn器件的工艺改进","authors":"Minkyoung Kim, Sung-Dae Lee, Jae Seok Lee, N. Kwak, Sam Dong Kim, Jin-Koo Rhee","doi":"10.1109/GSMM.2008.4534546","DOIUrl":null,"url":null,"abstract":"We have fabricated InP Gunn diodes using the improved fabrication technology in order to eliminate the problems resulting from the fabrication procedure of InP Gunn diodes for operation at 94 GHz. We see that the developed fabrication procedure using the trench method reduces the stress in InP epi-layers during alloy, and therefore the cracks in epi-layers were reduced.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Improvement of Fabrication Technology for InP Gunn Devices Using Trench Method\",\"authors\":\"Minkyoung Kim, Sung-Dae Lee, Jae Seok Lee, N. Kwak, Sam Dong Kim, Jin-Koo Rhee\",\"doi\":\"10.1109/GSMM.2008.4534546\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have fabricated InP Gunn diodes using the improved fabrication technology in order to eliminate the problems resulting from the fabrication procedure of InP Gunn diodes for operation at 94 GHz. We see that the developed fabrication procedure using the trench method reduces the stress in InP epi-layers during alloy, and therefore the cracks in epi-layers were reduced.\",\"PeriodicalId\":304483,\"journal\":{\"name\":\"2008 Global Symposium on Millimeter Waves\",\"volume\":\"49 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 Global Symposium on Millimeter Waves\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GSMM.2008.4534546\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 Global Symposium on Millimeter Waves","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GSMM.2008.4534546","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

我们采用改进的制造技术制造了InP Gunn二极管，以消除在94 GHz工作的InP Gunn二极管的制造过程中产生的问题。我们发现，采用沟槽法制备的工艺降低了InP外延层在合金过程中的应力，从而减少了外延层的裂纹。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Improvement of Fabrication Technology for InP Gunn Devices Using Trench Method

We have fabricated InP Gunn diodes using the improved fabrication technology in order to eliminate the problems resulting from the fabrication procedure of InP Gunn diodes for operation at 94 GHz. We see that the developed fabrication procedure using the trench method reduces the stress in InP epi-layers during alloy, and therefore the cracks in epi-layers were reduced.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2008 Global Symposium on Millimeter Waves

自引率

0.00%

发文量