s波段AlGaN/GaN功率放大器，输出功率超过20瓦

2008 European Microwave Integrated Circuit Conference Pub Date : 2008-10-27 DOI:10.1109/EMICC.2008.4772233

M. van Heijningen, G.C. Visser, J. Wurfl, F. V. van Vliet

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引用次数: 12

摘要

本文设计了一种基于AlGaN/GaN CPW技术的s波段HPA MMIC，用于雷达tr模块。讨论了使用MMIC解决方案与分立功率器件的权衡。MMIC在3.1 GHz时的最大输出功率为38瓦，功率增加效率为37%。在2.5 ~ 3.7 GHz范围内模拟了20瓦以上的输出功率。对高达4:1的高输出VSWR值的鲁棒性已经进行了检查，仿真显示最大漏极电压约为60 V。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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S-Band AlGaN/GaN Power Amplifier MMIC with over 20 Watt Output Power

This paper presents the design of an S-band HPA MMIC in AlGaN/GaN CPW technology for radar TR-module application. The trade-offs of using an MMIC solution versus discrete power devices are discussed. The MMIC shows a maximum output power of 38 Watt at 37% Power Added Efficiency at 3.1 GHz. An output power of more than 20 Watt has been simulated from 2.5 to 3.7 GHz. The robustness against high output VSWR values up to 4:1 has been checked and simulations show a maximum drain-gate voltage of around 60 V.

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2008 European Microwave Integrated Circuit Conference

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