LSO闪烁体的光致发光和热致发光

1993 IEEE Conference Record Nuclear Science Symposium and Medical Imaging Conference Pub Date : 1993-10-31 DOI:10.1109/NSSMIC.1993.701642

R. Visser, C. Melcher, J. S. Schweitzer, H. Suzuki, T. Tombrello

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引用次数: 63

摘要

报道了5种不同光输出的Lu/sub 2(1-x/)Ce/sub 2x/(SiO/sub 4/)O (LSO)晶体的光激发发光(PSL)和热释光(TL)。光照射到Ce/sup 3+/吸收带，在280 nn附近出现一个宽的吸收带，这被认为是Ce/sup 4+/。此外，还观察到一条延伸超过700纳米的尾巴。光照射到这个尾部(PSL)或加热晶体(TL)导致Ce/sup 3+/发射。结果表明，PSL和TL都是由相同的陷阱引起的:此外，在伽马射线照射下的光输出与晶体中陷阱浓度之间存在反相关关系。在某些晶体中造成低光输出的复合中心的性质尚不清楚。退火实验表明，陷阱和复合中心可能与氧空位有关。>

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Photostimulated luminescence and thermoluminescence of LSO scintillators

Photostimulated luminescence (PSL) and thermoluminescence (TL) from five Lu/sub 2(1-x/)Ce/sub 2x/(SiO/sub 4/)O (LSO) crystals with different light outputs is reported. Optical irradiation into the Ce/sup 3+/ absorption bands causes the appearance of a broad absorption band near 280 nn which is ascribed to Ce/sup 4+/. In addition, a tail is observed extending beyond 700 nm. Optical irradiation into this tail (PSL) or heating of the crystal (TL) results in Ce/sup 3+/ emission. It is shown that both PSL and TL are due to the same traps: In addition, an anti-correlation is found between the light output under gamma-ray irradiation and the trap concentration in the crystal. The nature of the recombination centers responsible for the low light output in some crystals is not clear. Annealing experiments suggest that the traps and the recombination centers may be related to oxygen vacancies. >

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1993 IEEE Conference Record Nuclear Science Symposium and Medical Imaging Conference

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