p-GaNHEMTs和GaNMISHEMTs的短路能力

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) Pub Date : 2017-05-01 DOI:10.23919/ISPSD.2017.7988916

M. Fernández, X. Perpiñà, M. Vellvehí, X. Jordà, J. Roig, F. Bauwens, M. Tack

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引用次数: 10

摘要

氮化镓(GaN)增强型高电子迁移率晶体管(ehemt)是一种很有前途的电机驱动器件。因此，确保并深入了解它们对短路(SC)故障的坚固性变得至关重要。因此，首次在具有相似导通电阻(~ 100 mΩ)和击穿电压(~ 600 V)的商用ehemt中研究了SC应力(类型I和II)。作为SC失效机制，确定了热(SC I)和介电(SC II)击穿。

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Short-circuit capability in p-GaNHEMTs and GaNMISHEMTs

Gallium Nitride (GaN) Enhancement-mode High-Electron-Mobility Transistors (EHEMTs) are promising devices for motor drives. Hence, ensuring and gaining insight into their ruggedness against Short-Circuit (SC) faults become essential. Thus, SC stresses (types I and II) are studied for the first time in commercial EHEMTs with similar on-state resistance (∼ 100 mΩ) and breakdown voltage (∼ 600 V). As SC failure mechanisms, thermal (SC I) and dielectric (SC II) breakdown are identified.

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2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

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