Pankaj Kumar, K. Koley, R. Goswami, A. Maurya, Subindu Kumar
{"title":"基于双端口器件网络分析的高k栅极全能MOSFET电噪声特性","authors":"Pankaj Kumar, K. Koley, R. Goswami, A. Maurya, Subindu Kumar","doi":"10.1109/ICITEE56407.2022.9954118","DOIUrl":null,"url":null,"abstract":"This work investigates the numerical analysis based on multiple noise figures of merit in a high-k gate-all-around MOSFET by considering two-port device analysis. The noise in the device is calculated by analyzing the statistical behavior of random voltage sources at the terminals of the MOSFET represented as a two-port system. Although, HfO2 based GAA MOSFET device shows better ON-state current, yet, the device shows degradation in minimum noise figure, autocorrelation, cross-correlation, optimum source impedance, and noise conductance when compared to SiO2 based devices.","PeriodicalId":246279,"journal":{"name":"2022 14th International Conference on Information Technology and Electrical Engineering (ICITEE)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Electrical Noise Behaviour of High-k Gate-All-Around MOSFET Based on Two-Port Device Network Analysis\",\"authors\":\"Pankaj Kumar, K. Koley, R. Goswami, A. Maurya, Subindu Kumar\",\"doi\":\"10.1109/ICITEE56407.2022.9954118\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work investigates the numerical analysis based on multiple noise figures of merit in a high-k gate-all-around MOSFET by considering two-port device analysis. The noise in the device is calculated by analyzing the statistical behavior of random voltage sources at the terminals of the MOSFET represented as a two-port system. Although, HfO2 based GAA MOSFET device shows better ON-state current, yet, the device shows degradation in minimum noise figure, autocorrelation, cross-correlation, optimum source impedance, and noise conductance when compared to SiO2 based devices.\",\"PeriodicalId\":246279,\"journal\":{\"name\":\"2022 14th International Conference on Information Technology and Electrical Engineering (ICITEE)\",\"volume\":\"81 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 14th International Conference on Information Technology and Electrical Engineering (ICITEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICITEE56407.2022.9954118\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 14th International Conference on Information Technology and Electrical Engineering (ICITEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICITEE56407.2022.9954118","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical Noise Behaviour of High-k Gate-All-Around MOSFET Based on Two-Port Device Network Analysis
This work investigates the numerical analysis based on multiple noise figures of merit in a high-k gate-all-around MOSFET by considering two-port device analysis. The noise in the device is calculated by analyzing the statistical behavior of random voltage sources at the terminals of the MOSFET represented as a two-port system. Although, HfO2 based GAA MOSFET device shows better ON-state current, yet, the device shows degradation in minimum noise figure, autocorrelation, cross-correlation, optimum source impedance, and noise conductance when compared to SiO2 based devices.
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