HfO/sub //多晶硅界面势垒高度的直接测量:能带结构和局部效应

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. Pub Date : 2004-06-15 DOI:10.1109/VLSIT.2004.1345429

L. Pantisano, P. Chen, V. Afanas’ev, L. Ragnarsson, G. Pourtois, G. Groeseneken

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引用次数: 2

摘要

在本研究中，综合实验测量和物理图片表明，无论是否掺杂多晶硅，在靠近多晶硅/HfO/sub 2/界面的介质中产生的缺陷是观察到的有效WF变化的原因。这些缺陷是两性的，在空间上分布不均匀。

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Direct measurement of barrier height at the HfO/sub 2//poly-Si interface: Band structure and local effects

In this study comprehensive experimental measurements together with a physical picture demonstrate that, regardless of poly-Si doping, the defects creation in the dielectric close to the poly-Si/HfO/sub 2/ interface is responsible for the observed effective WF change. These defects are amphoteric and spatially nonuniformly distributed.

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Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.

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