纳米级CMOS技术中的低功耗、低失调、面积效率比较器设计

V. Melikyan, V. P. Grigoryants, A. Mkhitaryan, G. Petrosyan, A. Hayrapetyan, Zaven M. Avetisyan, Simon H. Gharibyan, N. H. Beglaryan
{"title":"纳米级CMOS技术中的低功耗、低失调、面积效率比较器设计","authors":"V. Melikyan, V. P. Grigoryants, A. Mkhitaryan, G. Petrosyan, A. Hayrapetyan, Zaven M. Avetisyan, Simon H. Gharibyan, N. H. Beglaryan","doi":"10.1109/EWDTS.2018.8524737","DOIUrl":null,"url":null,"abstract":"Low power, area efficient clocked comparator with high resolution was designed in SAED 32/28nm CMOS process for SAR ADC applications. The analog comparator is based on digital cells, hence doesn't have stability issues, mismatches induced by the differential pair, can be easily integrated to the digital part of VLSI systems, dissipates small power, and has a small area. Input offset equation of the comparator was derived considering mismatches between transfer characteristics of the comparator stages and calculated total offset with Monte-Carlo simulation. Finally, the comparator performance was verified over PVT variation in designed 10-bit SAR ADC.","PeriodicalId":127240,"journal":{"name":"2018 IEEE East-West Design & Test Symposium (EWDTS)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low Power, Low Offset, Area Efficient Comparator Design in Nanoscale CMOS Technology\",\"authors\":\"V. Melikyan, V. P. Grigoryants, A. Mkhitaryan, G. Petrosyan, A. Hayrapetyan, Zaven M. Avetisyan, Simon H. Gharibyan, N. H. Beglaryan\",\"doi\":\"10.1109/EWDTS.2018.8524737\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Low power, area efficient clocked comparator with high resolution was designed in SAED 32/28nm CMOS process for SAR ADC applications. The analog comparator is based on digital cells, hence doesn't have stability issues, mismatches induced by the differential pair, can be easily integrated to the digital part of VLSI systems, dissipates small power, and has a small area. Input offset equation of the comparator was derived considering mismatches between transfer characteristics of the comparator stages and calculated total offset with Monte-Carlo simulation. Finally, the comparator performance was verified over PVT variation in designed 10-bit SAR ADC.\",\"PeriodicalId\":127240,\"journal\":{\"name\":\"2018 IEEE East-West Design & Test Symposium (EWDTS)\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE East-West Design & Test Symposium (EWDTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EWDTS.2018.8524737\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE East-West Design & Test Symposium (EWDTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EWDTS.2018.8524737","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

采用SAED 32/28nm CMOS工艺设计了低功耗、高分辨率的SAR ADC时钟比较器。模拟比较器基于数字单元,因此不存在稳定性问题,由差分对引起的不匹配,可以很容易地集成到VLSI系统的数字部分,功耗小,面积小。考虑比较器各阶传递特性与计算的总偏移量不匹配,推导了比较器输入偏移量方程。最后,在设计的10位SAR ADC的PVT变化情况下,验证了比较器的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low Power, Low Offset, Area Efficient Comparator Design in Nanoscale CMOS Technology
Low power, area efficient clocked comparator with high resolution was designed in SAED 32/28nm CMOS process for SAR ADC applications. The analog comparator is based on digital cells, hence doesn't have stability issues, mismatches induced by the differential pair, can be easily integrated to the digital part of VLSI systems, dissipates small power, and has a small area. Input offset equation of the comparator was derived considering mismatches between transfer characteristics of the comparator stages and calculated total offset with Monte-Carlo simulation. Finally, the comparator performance was verified over PVT variation in designed 10-bit SAR ADC.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信