{"title":"化学机械抛光工艺制备Pb(Zr,Ti)O3/CeO2/Si MFIS结构的电学性能","authors":"N. Kim, P. Ko, Woo-Sun Lee","doi":"10.1109/ISAF.2008.4693729","DOIUrl":null,"url":null,"abstract":"Metal-ferroelectric-insulator-silicon field-effect-transistors (MFISFETs) of Au/PZT/CeO2/Si were fabricated by the novel method of chemical mechanical polishing (CMP) damascene process. The vertical sidewall without the surface and/or plasma damage could be easily fabricated by it. The typical ferroelectric characteristics were sucessfully obtained although the remanent polarization value was low.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical properties of Pb(Zr,Ti)O3/CeO2/Si MFIS structure fabricated by chemical mechanical polishing (CMP) damascene process\",\"authors\":\"N. Kim, P. Ko, Woo-Sun Lee\",\"doi\":\"10.1109/ISAF.2008.4693729\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Metal-ferroelectric-insulator-silicon field-effect-transistors (MFISFETs) of Au/PZT/CeO2/Si were fabricated by the novel method of chemical mechanical polishing (CMP) damascene process. The vertical sidewall without the surface and/or plasma damage could be easily fabricated by it. The typical ferroelectric characteristics were sucessfully obtained although the remanent polarization value was low.\",\"PeriodicalId\":228914,\"journal\":{\"name\":\"2008 17th IEEE International Symposium on the Applications of Ferroelectrics\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 17th IEEE International Symposium on the Applications of Ferroelectrics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.2008.4693729\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2008.4693729","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical properties of Pb(Zr,Ti)O3/CeO2/Si MFIS structure fabricated by chemical mechanical polishing (CMP) damascene process
Metal-ferroelectric-insulator-silicon field-effect-transistors (MFISFETs) of Au/PZT/CeO2/Si were fabricated by the novel method of chemical mechanical polishing (CMP) damascene process. The vertical sidewall without the surface and/or plasma damage could be easily fabricated by it. The typical ferroelectric characteristics were sucessfully obtained although the remanent polarization value was low.
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