损耗基板上耦合微带的横线参数

D. Assante, L. Verolino
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引用次数: 0

摘要

本文讨论了损耗衬底上耦合微带的频率相关横线参数C和G的计算。所提出的全波方法与诺伊曼级数的使用相结合,可以简单快速地解决问题,并准确地考虑到微带之间的接近效应。该方法也可用于验证简单的封闭形式表达式。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Transverse line parameters of coupled microstrips on a lossy substrate
This paper deals with the evaluation of the frequencydependent transverse line parameters C and G of coupled microstrips on a lossy substrate. The proposed full wave approach, combined with the use of the Neumann series, allows a simple and fast computing solution of the problem and accurately takes into account the proximity effect between the microstrips. The method can also be useful for the validation of simple closed-form expressions.
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