{"title":"三独立栅极场效应晶体管的超陡阈下斜率","authors":"Jorge Romero-González, P. Gaillardon","doi":"10.1049/PBCS039E_CH6","DOIUrl":null,"url":null,"abstract":"The device characteristics of TIGFET technology, in particular the steep subthreshold slope (SS), have been studied in detail in this chapter. Notably, we have (1) summarized TIGFET's working principle and fabrication techniques, (2) reviewed experimental demonstrations of SSmin in TIGFETs with respect to voltage and temperature, and (3) performed device-level simulations to display and thoroughly explain the SS capabilities of TIGFETs with respect to channel length and voltage. Our results allow us to develop an in-depth explanation into the origin of steep SS and the potential limitations of SS in TIGFETs due to short-channel effects.","PeriodicalId":270370,"journal":{"name":"Functionality-Enhanced Devices An alternative to Moore's Law","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Three-independent gate FET's super steep subthreshold slope\",\"authors\":\"Jorge Romero-González, P. Gaillardon\",\"doi\":\"10.1049/PBCS039E_CH6\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The device characteristics of TIGFET technology, in particular the steep subthreshold slope (SS), have been studied in detail in this chapter. Notably, we have (1) summarized TIGFET's working principle and fabrication techniques, (2) reviewed experimental demonstrations of SSmin in TIGFETs with respect to voltage and temperature, and (3) performed device-level simulations to display and thoroughly explain the SS capabilities of TIGFETs with respect to channel length and voltage. Our results allow us to develop an in-depth explanation into the origin of steep SS and the potential limitations of SS in TIGFETs due to short-channel effects.\",\"PeriodicalId\":270370,\"journal\":{\"name\":\"Functionality-Enhanced Devices An alternative to Moore's Law\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-11-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Functionality-Enhanced Devices An alternative to Moore's Law\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/PBCS039E_CH6\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Functionality-Enhanced Devices An alternative to Moore's Law","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/PBCS039E_CH6","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Three-independent gate FET's super steep subthreshold slope
The device characteristics of TIGFET technology, in particular the steep subthreshold slope (SS), have been studied in detail in this chapter. Notably, we have (1) summarized TIGFET's working principle and fabrication techniques, (2) reviewed experimental demonstrations of SSmin in TIGFETs with respect to voltage and temperature, and (3) performed device-level simulations to display and thoroughly explain the SS capabilities of TIGFETs with respect to channel length and voltage. Our results allow us to develop an in-depth explanation into the origin of steep SS and the potential limitations of SS in TIGFETs due to short-channel effects.
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