重复雪崩应力下的SiC功率沟槽mos晶体管

J. Marek, J. Kozarik, M. Minárik, A. Chvála, M. Matúš, L. Stuchlíková
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引用次数: 0

摘要

本文研究了商用1.2 kv 4H-SiC mosfet在重复非箝位电感开关(UIS)下的鲁棒性和可靠性问题。观察到器件特性的退化,包括传输特性、漏极漏电流$I_{dss}$和输出特性。在相对较短的雪崩应力(UIS应力)后,泄漏电流显著增加,并且在3000万次循环后发生器件破坏。除了静电特性的变化外,还观察到开关时间的变化。热载流子注入和捕获栅极氧化物及其界面被认为是电气参数变化的原因。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
SiC Power TrenchMOS Transistor Under Repetitive Avalanche Stress
This paper investigates the robustness and reliability issues of commercial 1.2-kV 4H-SiC MOSFETs under repetitive unclamped inductive switching (UIS). The degradation of device characteristics, including the transfer characteristics, drain leakage current $I_{dss}$, and output characteristics, is observed. A significant increase in leakage current was observed after relatively short avalanche stress (UIS stress), and device destruction occurred after 30 million of cycles. Besides the shift of static electrical characteristics, also a change in switching times was observed. The hot carriers injection and trapping into the gate oxide and its interfaces is believed to be responsible for the variation of electrical parameters.
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