低功耗高性能和动态配置的多端口缓存存储器架构

H. Bajwa, EE X.Chen
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引用次数: 11

摘要

随着近年来高性能微处理器技术中片上高速缓存尺寸的大幅增加,SRAM中的功耗和泄漏电流变得至关重要。高性能IC设计使用多端口缓存存储器来提供所需的可访问性和带宽。由于字和位线覆盖了整个缓存段的足迹,因此为多个端口复制字和位线会导致较大的硅面积,并增加位线放电和功耗。随着器件尺寸和电源电压的不断缩小,静态功耗已成为影响系统总功耗的关键因素。在本文中,我们提出了一种面积和节能的多端口缓存存储器架构,该架构采用隔离节点,局部感测放大器和动态内存分区技术,以方便同时多端口访问而不重复位线。所提出的高速缓存架构也减少了位线延迟。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low-Power High-Performance and Dynamically Configured Multi-Port Cache Memory Architecture
As on-chip cache size has increased considerably in recent high-performance microprocessor technologies, power dissipation and leakage current in SRAM have become critical. High-performance IC designs use multi-port cache memory to provide the needed accessibility and bandwidth. Since the word and bit lines cover the foot-print of the entire cache section, duplicating the word and bit lines for multiple ports results in large silicon area and increases bitline discharge and power dissipation. As technology scales down device size and supply voltages, static power dissipation has emerged as a critical factor in total system power dissipation. In this paper, we present an area-and energy-efficient multi-port cache memory architecture, which employs isolation nodes, local sense amplifiers and dynamic memory partitioning techniques, to facilitate simultaneous multi-port accesses without duplicating bitlines. The proposed cache memory architecture also reduces bitline latency.
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