基于0.18µm SiGe BiCMOS工艺的x波段4×4片上管家矩阵设计

2019 IEEE 19th International Conference on Communication Technology (ICCT) Pub Date : 2019-10-01 DOI:10.1109/ICCT46805.2019.8947045

Xiaohui Tao, Rui Cao, Zhuang Li, Dawei Rong, Lihui Jiang, Liguo Sun

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引用次数: 0

摘要

本文提出了一种基于0.18$\mu$m SiGe BiCMOS工艺的x波段4×4片上管家矩阵。该矩阵由电感和电容器等集总元件实现，具有小于2mm2的宽带性能。测量结果与仿真结果吻合较好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design of X-band 4×4 On-chip Butler Matrix Based on 0.18µm SiGe BiCMOS Process

In this paper, an X-band 4×4 on-chip butler matrix is presented based on 0.18$\mu$m SiGe BiCMOS process. The matrix, implemented by lumped components such as inductors and capacitors, shows broadband performance with the size less than 2mm2. The measurement results are consistent with simulation ones.

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来源期刊

2019 IEEE 19th International Conference on Communication Technology (ICCT)

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