一个0.325 thz CMOS放大器的演示

2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications Pub Date : 2016-06-06 DOI:10.1109/GSMM.2016.7500295

D. Parveg, D. Karaca, M. Varonen, A. Vahdati, K. Halonen

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引用次数: 12

摘要

本文提出了一种采用28纳米FDSOI CMOS技术设计的0.325 thz单端放大器。该放大器由四个共源增益级组成，并利用交错调谐以及电感反馈(漏极到门)技术来提高宽频带上的增益。该放大器的总功耗为28 mW，在325 GHz时峰值增益为4.5 dB。据作者所知，这是迄今为止硅放大器的最高工作频率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Demonstration of a 0.325-THz CMOS amplifier

This paper presents a 0.325-THz single-ended amplifier designed in a 28-nm FDSOI CMOS technology. The amplifier consists of four common-source gain stages and utilizes staggered-tuning along with inductive feedback (drain to gate) technique to boost up the gain over a wide frequency band. Having a total power consumption of 28 mW, the amplifier achieves a peak gain of 4.5 dB at 325 GHz. To the best of authors' knowledge, this is the highest operation frequency demonstrated for a silicon amplifier up to date.

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2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications

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