采用单根匹配网络的s波段两级低噪声放大器

2016 International Conference on Radar, Antenna, Microwave, Electronics, and Telecommunications (ICRAMET) Pub Date : 2016-10-01 DOI:10.1109/ICRAMET.2016.7849583

Y. Sulaeman, T. Praludi, Y. Taryana, Dedi

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引用次数: 0

摘要

提出、设计和开发了一种基于单存根匹配网络的s波段双级低噪声放大器。该结构旨在获得具有最小驻波比的高增益放大器。所提出的LNA由一级和二级组成，采用异质结FET NE3509M04作为有源器件，具有较高的相关增益。所提出的LNA在Rogers RO4003C基板上采用平面结构设计。为了获得良好的匹配条件，还采用了平面结构。使用Agilent Design System (ADS) 2011.10软件对增益、驻波比、噪声系数(NF)值和阻抗进行分析。设计的LNA在3 GHz时的特性为:VSWRin 1.71, VSWRout 3.07, NF 6.17 dB，增益23.71 dB，比仿真结果低8.66 dB。

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S-band two stage low-noise-amplifier using single stub matching network

Two-stage low-noise-amplifier (LNA) using single stub matching networks for S-band operation is proposed, designed, and developed. The configuration aims to obtain high gain amplifier with minimum voltage standing wave ratio (VSWR). The proposed LNA consists of the first and the second stages using hetero junction FET NE3509M04 as active device where it has high associated gain. The proposed LNA is designed with planar structure on a Rogers RO4003C substrate. The planar structure is also used for obtaining good matching condition. The Agilent Design System (ADS) 2011.10 software is used for analysis of gain, VSWR, noise figure (NF) values and impedances. Characterizations of the designed LNA at 3 GHz are 1.71 of VSWRin, 3.07 of VSWRout, 6.17 dB of NF and 23.71 dB for gain which is lower 8.66 dB than simulated result.

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2016 International Conference on Radar, Antenna, Microwave, Electronics, and Telecommunications (ICRAMET)

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