纳米光刻时代设计制造协同对抗良率损失

S. Inoue, S. Kobayashi
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引用次数: 0

摘要

阐明了纳米光刻时代设计-制造协同的概念。提出了一种能合理分配反映设计意图的制造公差到版图的新型设计-制造系统。根据该系统,可以在布置图上明确分配“薄弱环节”,并对生产过程进行控制,以减轻制造负担,进一步提高成品率。更具体地说,电临界部分的提取和转换到制造公差已被证明。该公差用于减少掩模数据准备的计算负担。此外,基于产量模型的布局评分系统也具有显著的意义。可以检查布局和修改,以免失去产量。演示了产量函数的创建、布局评分和基于产量模型的布局修改。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
All-out fight against yield losses by design-manufacturing collaboration in nano-lithography era
The concept of design-manufacturing collaboration for nano-lithography era has been clarified. The novel design-manufacturing system that the manufacturing tolerance reflecting design intention properly can be allocated to the layout has been proposed. According to the system, one can assign the “weak portion” explicitly on the layout, and can control the process for reducing the burden of manufacturing and further getting higher yield. More specifically, the extraction of electrically critical portion and conversion to the manufacturing tolerance has been demonstrated. The tolerance has applied to reduce computational burden of mask data preparation. Besides, the yield model-based layout scoring system has been also suggested to be significant remarkably. One can check the layout and modify not to loose the yield. Creation of yield function, layout scoring, and layout modification based upon the yield model have been demonstrated.
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