激光辅助键合FCBGA封装衬底效应研究

Yu Lung Huang, Joe Huang, C. M. Huang, K. Yu, Tank Luo, W. Hong, Taishin Ren
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引用次数: 1

摘要

为了支持人工智能、物联网、工业物联网、云服务和5G的高速增长,IC(服务器/路由器/交换机)需要更高/更快的性能来收集、存储、交换和传输大量数据。因此,集成电路的I/O(输入/输出)密度将随着硅节点< 5 nm、细间距$\mu\text{bump}$和细线宽/空间衬底而增加。然而,集成电路的焊料回流面临芯片损伤(硅节点)的两个问题:漏电流、高电迁移;ELK(极低k):漏电流,裂纹)和焊料高应力(焊料:吸丝,IMC(金属间化合物))由于MR(质量回流)的高热预算。在本文中,激光辅助键合(LAB)将取代质量回流(MR)来解决这些问题。本研究构建了尺寸为$55^{\ast}55\ \text{mm}2$ FCBGA(倒装芯片球栅阵列)的实验车。将两种类型的衬底(A和B)应用于FCBGA,其阻焊层(厚度、表面亮度/粗糙度)和衬底质量之间存在差异。LAB采用波长为980 nm的半导体激光器,激光束面积为衬底面积的91.5%。本研究分为三个部分。对于第一部分,在相同参数下,无衬底的模具表面温度高于有衬底的模具表面温度,约为187.2℃。结果表明,该衬底具有储热功能。此外,对于有衬底的模具表面温度,结果表明,所有焊料在2.82秒熔化,模具中心表面温度比模具四角低22.8℃。模具中心表面温度与凸块表面温度的差值为48.3℃。结果表明,模具与衬底的整体温度不均匀。其次,对于衬底效应,由于以下原因,模具和B衬底的表面温度低于模具和A衬底的表面温度:对于阻焊片,(A) B衬底的表面亮度比A衬底高11%,导致反射光增加;(b) b基板的粗糙度比A基板的粗糙度低26%,导致反射光增加;(c) B衬底的厚度比A衬底的厚度低23%,导致吸收光减少;对于衬底质量(d), B衬底的重量比A衬底的重量高10%。最后,通过LAB组装的FCBGA封装通过了可靠性测试:MSL4预处理uHAST 168小时,TCT B 1000热循环,HTST 1000小时。文中详细介绍了实验结果并进行了讨论。综上所述,我们开发了在不同衬底下求解该问题的参数集,并预测了焊料的熔化时间和模具表面的温度分布。因此,LAB(激光辅助键合)可以成功地解决MR遇到的问题。本研究将讨论开发结果的完整描述。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The Study of Packaging Substrate Effect in FCBGA by Laser Assisted Bonding
In order to support the high growth of Artificial Intelligence, Internet of Things, Industrial IOT, Cloud Service and 5G, the IC (Server/Router/Switch) needs higher/faster performance to collect, store, commute and transmit a mass of data. Therefore, the I/O (input/output) density of IC will increase with the silicon nodes < 5 nm, fine pitch $\mu\text{bump}$, and fine line width/space substrate. However, the solder reflow of IC faces two problems of the chip damages (silicon nodes: current leakage, highly electromigration; ELK (extremely low-k): current leakage, crack) and solder high stress (solder: wicking, IMC (intermetallic compound)) due to highly thermal budget of MR (mass reflow). In this paper, LAB (laser assisted bonding) will replace MR (mass reflow) to solve these problems. In this study, a test vehicle with the size of $55^{\ast}55\ \text{mm}2$ FCBGA (flip chip ball grid array) was built. Two types (A and B) of substrate were applied to the FCBGA, with the differences between the solder mask (thickness, surface brightness/roughness) and substrate mass. LAB uses a semiconductor laser with wavelength of 980 nm, and the area of laser beam is 91.5% of the substrate area. The study is divided into three parts. For the first part, the surface temperature of die without substrate is higher than that of die with substrate at the same parameters about 187.2 °C. The result shows that the substrate has the function of heat storage. In addition, for the surface temperature of die with substrate, the result shows that all solders melt at 2.82 sec, and the surface temperature of the center of die is 22.8 °C lower than the four corners of it. Then the delta temperature between the surface temperature of the center of die and bump is 48.3 °C. The result shows that the overall temperature of die with substrate is not uniform. Next, for substrate effect, the surface temperature of die and B substrate is lower than that of die and A substrate based on the following reasons: for the solder mask, (a) the surface brightness of B substrate is 11% higher than that of A substrate result in an increase of the reflected light; (b) the roughness of B substrate is 26% lower than that of A substrate result in an increase of the reflected light; (c) the thickness of B substrate is 23% lower than that of A Substrate result in a reduction of Absorbed light; for substrate mass (d) the weight of B substrate is 10% higher than that of A substrate. Finally, the assembled FCBGA packages by LAB passed reliability tests: MSL4 pre-conditioning with uHAST 168 hours, TCT B 1000 thermal cycles and HTST 1000 hours. Details of the results are presented and discussed in the paper. In summary, we have developed the parameter set to solve it in different substrates and predicted the melting time of solder and temperature profile of die surface. Therefore, LAB (laser assisted bonding) can successfully solve the problems MR encounters. The full descriptions of the development results will be discussed in this study.
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