用于测试嵌入式DRAM的单指令可编程存储器BIST

Chung-Fu Lin, Jen-Chieh Ou, Meng-Hsueh Wang, Y. Ou, Ming-Hsin Ku
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引用次数: 5

摘要

随着现代SoC设计中功能的不断增加,对密集嵌入式存储器的需求也在不断增长。在复杂的集成环境中对这种高密度嵌入式DRAM (eDRAM)宏进行测试已成为一个重要的问题。在这项工作中,我们提出了一个基于单指令的可编程存储器BIST,用于测试eDRAM宏。基于我们的BIST设计,支持的内存测试算法分为五类。此外,提出了一种紧凑的指令来编码每组的操作,并采用了一个两级地址生成器来产生所有需要的寻址索引。与现有工作相比,所建议的体系结构在面积开销和可编程性方面提供了更好的设计权衡。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Single-instruction based programmable memory BIST for testing embedded DRAM
With the increasing functionalities in modern SoC design, the need for dense embedded memory is growing. The test issue for this high density embedded DRAM (eDRAM) macro in a complex integration environment is becoming an important issue. In this work, we propose a single-instruction based programmable memory BIST for testing an eDRAM macro. Based on our BIST design, the supported memory testing algorithms are classified into five groups. Moreover, a compact instruction is proposed to encode the operation of each group and a two-level address generator is adopted to produce all the required addressing indexes. The proposed architecture provides a better design tradeoff in terms of the area overhead and the programmability compared with the existing work.
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