植体分离与干蚀刻

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 1994-03-27 DOI:10.1109/ICIPRM.1994.328251

C. Abernathy, F. Ren, S. Pearton

{"title":"植体分离与干蚀刻","authors":"C. Abernathy, F. Ren, S. Pearton","doi":"10.1109/ICIPRM.1994.328251","DOIUrl":null,"url":null,"abstract":"Smooth, anisotropic dry etching of InN layers is demonstrated in low pressure (1-30 Torr) CH/sub 4H/sub 2/, Cl/sub 2H/sub 2/ or CCl/sub 2/F/sub 2Ar Electron Cyclotron Resonance discharges with additional dc biasing of the sample. Increasing the applied microwave power produces significant enhancements in etch rate. The presence of H/sub 2/ or F/sub 2/ in the gas chemistries is necessary to facilitate equi-rate removal of the group III and nitrogen etch products, leading to smooth surface morphologies. F/sup +/ implantation at doses of /spl sim/10/sup 15/ cm/sup -2/ produces sheet resistances >5/spl times/10/sup 3/ /spl Omega/spl square/ in initially degenerately n/sup +/(4/spl times/10/sup 20/ cm/sup -3/) InN, and values >10/sup 6/ /spl Omega/spl square/ in lower-doped (/spl les/3/spl times/10/sup 19/ cm/sup -3/) ternary alloys InGaN and InAlN.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Implant isolation and dry etching of InN\",\"authors\":\"C. Abernathy, F. Ren, S. Pearton\",\"doi\":\"10.1109/ICIPRM.1994.328251\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Smooth, anisotropic dry etching of InN layers is demonstrated in low pressure (1-30 Torr) CH/sub 4H/sub 2/, Cl/sub 2H/sub 2/ or CCl/sub 2/F/sub 2Ar Electron Cyclotron Resonance discharges with additional dc biasing of the sample. Increasing the applied microwave power produces significant enhancements in etch rate. The presence of H/sub 2/ or F/sub 2/ in the gas chemistries is necessary to facilitate equi-rate removal of the group III and nitrogen etch products, leading to smooth surface morphologies. F/sup +/ implantation at doses of /spl sim/10/sup 15/ cm/sup -2/ produces sheet resistances >5/spl times/10/sup 3/ /spl Omega/spl square/ in initially degenerately n/sup +/(4/spl times/10/sup 20/ cm/sup -3/) InN, and values >10/sup 6/ /spl Omega/spl square/ in lower-doped (/spl les/3/spl times/10/sup 19/ cm/sup -3/) ternary alloys InGaN and InAlN.<<ETX>>\",\"PeriodicalId\":161711,\"journal\":{\"name\":\"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1994.328251\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1994.328251","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在低压(1-30 Torr) CH/sub - 4H/sub - 2/、Cl/sub - 2H/sub - 2/或CCl/sub - 2/F/sub - 2Ar电子回旋共振放电条件下，对样品进行了光滑的各向异性干刻蚀。增加微波功率可以显著提高蚀刻速率。气体化学中H/sub 2/或F/sub 2/的存在对于促进等速去除III族和氮腐蚀产物是必要的，从而导致光滑的表面形态。F/sup +/注入剂量为/spl sim/10/sup 15/ cm/sup -2/时，产生片状电阻>5/spl倍/10/sup 3/ /spl Omega/spl平方/在初始简并n/sup +/(4/spl倍/10/sup 20/ cm/sup -3/) InN中，>值为10/sup 6/ /spl Omega/spl平方/在低掺杂(/spl les/3/spl倍/10/sup 19/ cm/sup -3/)三元合金InGaN和InAlN中。>

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Implant isolation and dry etching of InN

Smooth, anisotropic dry etching of InN layers is demonstrated in low pressure (1-30 Torr) CH/sub 4H/sub 2/, Cl/sub 2H/sub 2/ or CCl/sub 2/F/sub 2Ar Electron Cyclotron Resonance discharges with additional dc biasing of the sample. Increasing the applied microwave power produces significant enhancements in etch rate. The presence of H/sub 2/ or F/sub 2/ in the gas chemistries is necessary to facilitate equi-rate removal of the group III and nitrogen etch products, leading to smooth surface morphologies. F/sup +/ implantation at doses of /spl sim/10/sup 15/ cm/sup -2/ produces sheet resistances >5/spl times/10/sup 3/ /spl Omega/spl square/ in initially degenerately n/sup +/(4/spl times/10/sup 20/ cm/sup -3/) InN, and values >10/sup 6/ /spl Omega/spl square/ in lower-doped (/spl les/3/spl times/10/sup 19/ cm/sup -3/) ternary alloys InGaN and InAlN.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

自引率

0.00%

发文量