{"title":"Si/SiGe双结太阳能电池性能分析","authors":"S. K. Choudhary, R. Ranjan, M. Das","doi":"10.1109/ICMAP.2013.6733559","DOIUrl":null,"url":null,"abstract":"In this paper, performance of Si/Si1-xGex thin film double junction solar cell is analyzed. Variation of efficiency of individual subcells and overall efficiency of the device has been studied with Ge-content and other device parameters viz., thickness of different subcells. Choice of Ge-content in SiGe layer and thickness of the top cell are very important to obtain optimized efficiency of the device. Efficiency increases initially with x and after a particular value of x, it decreases. More than 20% maximum efficiency is obtained for x=0.28, and for the thickness of top and bottom cells are 0.2μm and 0.12μm respectively.","PeriodicalId":286435,"journal":{"name":"2013 International Conference on Microwave and Photonics (ICMAP)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Performance analysis of Si/SiGe double junction solar cell\",\"authors\":\"S. K. Choudhary, R. Ranjan, M. Das\",\"doi\":\"10.1109/ICMAP.2013.6733559\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, performance of Si/Si1-xGex thin film double junction solar cell is analyzed. Variation of efficiency of individual subcells and overall efficiency of the device has been studied with Ge-content and other device parameters viz., thickness of different subcells. Choice of Ge-content in SiGe layer and thickness of the top cell are very important to obtain optimized efficiency of the device. Efficiency increases initially with x and after a particular value of x, it decreases. More than 20% maximum efficiency is obtained for x=0.28, and for the thickness of top and bottom cells are 0.2μm and 0.12μm respectively.\",\"PeriodicalId\":286435,\"journal\":{\"name\":\"2013 International Conference on Microwave and Photonics (ICMAP)\",\"volume\":\"103 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Conference on Microwave and Photonics (ICMAP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMAP.2013.6733559\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Microwave and Photonics (ICMAP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMAP.2013.6733559","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Performance analysis of Si/SiGe double junction solar cell
In this paper, performance of Si/Si1-xGex thin film double junction solar cell is analyzed. Variation of efficiency of individual subcells and overall efficiency of the device has been studied with Ge-content and other device parameters viz., thickness of different subcells. Choice of Ge-content in SiGe layer and thickness of the top cell are very important to obtain optimized efficiency of the device. Efficiency increases initially with x and after a particular value of x, it decreases. More than 20% maximum efficiency is obtained for x=0.28, and for the thickness of top and bottom cells are 0.2μm and 0.12μm respectively.
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