用于多掷TX/RX开关的增强线性技术。

2008 IEEE Radio and Wireless Symposium Pub Date : 2008-03-05 DOI:10.1109/RWS.2008.4463514

D. Prikhodko, J. Mason, C. Wei, A. Klimashov, G. Zhou, Y. Tkachenko, S. Sprinkle, R. Carter, S. Nabokin, J. Chiesa

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引用次数: 6

摘要

已成功开发出一种用于GSM/WCDMA应用的高线性9抛开关，其IMD2/3在低至2.8/0 V的控制电压下为-105 dBm。这种高线性性能是通过使用后置偏置技术实现的，该技术不会降低器件的功率处理能力，导致在控制电压3.2/0 V下VSWR 5:1的谐波性能低于-35 dBm，在2GHz时TX/TRX损耗低于0.9 dB。

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Enhanced linearity technique for multithrow TX/RX switches.

A highly linear 9 throw switch for GSM/WCDMA applications with an IMD2/3 of -105 dBm at the control voltages starting as low as 2.8/0 V has been successfully developed. This high linearity performance was achieved using a backside bias technique which does not degrade the power handling capability of the device resulting in the harmonics performance below -35 dBm for VSWR 5:1 at the control voltages 3.2/0 V and TX/TRX losses below 0.9 dB at 2GHz.

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2008 IEEE Radio and Wireless Symposium

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