{"title":"InP和GaAs自振荡混频器噪声系数的比较","authors":"S. Dixon, H. Jacobs","doi":"10.1109/ICSWA.1981.9335112","DOIUrl":null,"url":null,"abstract":"GaAs and InP Gunn-effect Oscillators used as self-excited mixers in the 60 GHz frequency range have been investigated. The double side-band noise figure and conversion characteristics was measured and it was shown that the noise performance obtained in these devices makes them attractive for applications where low cost, simplicity in circuitry, and small physical size are important factors.","PeriodicalId":254777,"journal":{"name":"1981 International Conference on Submillimeter Waves and Their Applications","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Comparison of Noise Figure of InP and GaAs Self-Oscillating Mixers\",\"authors\":\"S. Dixon, H. Jacobs\",\"doi\":\"10.1109/ICSWA.1981.9335112\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GaAs and InP Gunn-effect Oscillators used as self-excited mixers in the 60 GHz frequency range have been investigated. The double side-band noise figure and conversion characteristics was measured and it was shown that the noise performance obtained in these devices makes them attractive for applications where low cost, simplicity in circuitry, and small physical size are important factors.\",\"PeriodicalId\":254777,\"journal\":{\"name\":\"1981 International Conference on Submillimeter Waves and Their Applications\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1981-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1981 International Conference on Submillimeter Waves and Their Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSWA.1981.9335112\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1981 International Conference on Submillimeter Waves and Their Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSWA.1981.9335112","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comparison of Noise Figure of InP and GaAs Self-Oscillating Mixers
GaAs and InP Gunn-effect Oscillators used as self-excited mixers in the 60 GHz frequency range have been investigated. The double side-band noise figure and conversion characteristics was measured and it was shown that the noise performance obtained in these devices makes them attractive for applications where low cost, simplicity in circuitry, and small physical size are important factors.
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