布局依赖性对硅片性能影响的测试意义

Sandeep Kakde, Nadeem Khan
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引用次数: 0

摘要

布局相关效应(LDE)在模拟和数字电路的布局中起着至关重要的作用。这些影响都直接影响到集成电路的性能。如果您不注意布局依赖的效果,那么获得芯片适当性能的机会就会减少。有许多与布局相关的效应,如浅沟隔离效应(STI)、扩散长度效应(LoD)、聚扩散间距、井邻近效应(WPE)等。本文对上述问题进行了进一步的研究。工程师通常必须执行各种检查,以涵盖这些和相关的布局问题,以确保模拟布局的一致性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Testing Significance of Layout Dependent Impacts on Silicon Chips Performance
Layout Dependent Effects (LDE) plays a vital role in layout of analog and digital circuits. These effects are directly affects the performance of the integrated circuits. If you did not pay any attention to the layout dependent effects, then there is a less chance to get the proper performance of the chips. There are many layout dependent effects such as Shallow Trench Isolation (STI), Length of Diffusion (LoD), Poly and Diffusion spacing, Well Proximity Effect (WPE) etc. In this paper, more attention is given to the above topics. Engineers typically must perform a variety of checks that cover these and related layout issues to ensure analog layout consistency.
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