晶圆级双辅助半自动干转移及高性能单层CVD WS2晶体管的制备

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) Pub Date : 2022-06-12 DOI:10.1109/vlsitechnologyandcir46769.2022.9830376

Ming-Yang Li, Ching-Hao Hsu, Shin-Wei Shen, Ang-Sheng Chou, Y. Lin, Chih-Piao Chuu, Ning Yang, Sui-An Chou, Lina Huang, Chao-Ching Cheng, W. Woon, S. Liao, Chih-I Wu, Lain‐Jong Li, I. Radu, H. P. Wong, Han Wang

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引用次数: 5

摘要

利用半金属(Bi)和二维(2D)半导体(WS2)之间的弱耦合界面，开发了一种新型的单层(1L) CVD WS2的半自动化干转移工艺。铋半金属可作为二维材料的轻粘转移模板，在转移过程中引入最小的额外缺陷。基于该转移方法制备的二维材料，进一步在晶片尺度上验证了半金属接触(Bi和Sb)单层CVD WS2 nfet。我们的CVD 1L WS2 nfet采用半金属辅助转移制备，半金属(Bi和Sb)触点在VDS = 1 V时具有250µA/µm和243µA/µm的高导通电流，触点电阻分别为0.63 kΩ•µm和0.73 kΩ•µm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Wafer-Scale Bi-Assisted Semi-Auto Dry Transfer and Fabrication of High-Performance Monolayer CVD WS2 Transistor

A novel wafer-scale semi-automated dry transfer process for monolayer (1L) CVD WS2 was developed utilizing the weakly coupled interface between semimetal (Bi) and two-dimensional (2D) semiconductor (WS2). Bi semimetal serves as a gently adhesive transfer template for 2D materials, introducing minimal additional defects during the transfer process. Based on 2D materials processed using this new transfer method, semimetal-contacted (Bi and Sb) monolayer CVD WS2 nFETs were further demonstrated at wafer scale. Our CVD 1L WS2 nFETs fabricated using semimetal-assisted transfer with semimetal (Bi and Sb) contacts show record high on-current of 250 µA/µm and 243 µA/µm at VDS = 1 V, and record low contact resistance of 0.63 kΩ•µm and 0.73 kΩ•µm, respectively.

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来源期刊

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

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