{"title":"一种使用低压SOI mosfet的复合高压器件","authors":"S. Valeri, A. L. Robinson","doi":"10.1109/SOSSOI.1990.145766","DOIUrl":null,"url":null,"abstract":"A circuit is described that uses low-voltage transistors to form a high-voltage composite device. The circuit is a series string of SOI (silicon-on-insulator) MOSFETs and associated biasing elements fabricated using a modified nMOS process on a SIMOX (separation by implantation of oxygen) substrate. The circuit voltages higher than the breakdown voltage of a single transistor by dividing the applied voltage among the transistors in the string. MOSFET-like characteristics with breakdown voltage up to 60 V are demonstrated using a string of 25 SOI MOSFETs, each with a breakdown voltage of 6-7 V.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A composite high-voltage device using low-voltage SOI MOSFETs\",\"authors\":\"S. Valeri, A. L. Robinson\",\"doi\":\"10.1109/SOSSOI.1990.145766\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A circuit is described that uses low-voltage transistors to form a high-voltage composite device. The circuit is a series string of SOI (silicon-on-insulator) MOSFETs and associated biasing elements fabricated using a modified nMOS process on a SIMOX (separation by implantation of oxygen) substrate. The circuit voltages higher than the breakdown voltage of a single transistor by dividing the applied voltage among the transistors in the string. MOSFET-like characteristics with breakdown voltage up to 60 V are demonstrated using a string of 25 SOI MOSFETs, each with a breakdown voltage of 6-7 V.<<ETX>>\",\"PeriodicalId\":344373,\"journal\":{\"name\":\"1990 IEEE SOS/SOI Technology Conference. Proceedings\",\"volume\":\"65 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1990 IEEE SOS/SOI Technology Conference. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOSSOI.1990.145766\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1990 IEEE SOS/SOI Technology Conference. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOSSOI.1990.145766","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A composite high-voltage device using low-voltage SOI MOSFETs
A circuit is described that uses low-voltage transistors to form a high-voltage composite device. The circuit is a series string of SOI (silicon-on-insulator) MOSFETs and associated biasing elements fabricated using a modified nMOS process on a SIMOX (separation by implantation of oxygen) substrate. The circuit voltages higher than the breakdown voltage of a single transistor by dividing the applied voltage among the transistors in the string. MOSFET-like characteristics with breakdown voltage up to 60 V are demonstrated using a string of 25 SOI MOSFETs, each with a breakdown voltage of 6-7 V.<>
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