具有A2和L21结构的Co2MnGe和Co2MnSi薄膜的自旋极化

INTERMAG 2006 - IEEE International Magnetics Conference Pub Date : 2006-05-08 DOI:10.1063/1.2409775

A. Rajanikanth, Y. Takahashi, K. Hono

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引用次数: 27

摘要

本文采用点接触Andreev反射(PCAR)技术研究了Co2MnSi (CMS)和Co2MnGe (CMG) L2、A2阶多晶薄膜的自旋极化。结果表明，在PCAR技术的实验误差范围内，L21有序薄膜和A2有序薄膜在两种合金中的自旋极化几乎相同。因此，这些合金被预测为具有100%自旋极化的半金属。

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Spin polarization of Co2MnGe and Co2MnSi thin films with A2 and L21 structures

The present work aims at studying spin polarizations of Co2MnSi (CMS) and Co2MnGe (CMG ) polycrystaline thin films with L2, and A2 order by the point contact Andreev reflection (PCAR) technique. Results reveal that within the experimental errors of the PCAR technique, the spin polarization of the L21 ordered and A2 ordered thin films in both the alloys are almost the same. Hence, these alloys are predicted to be half-metals with 100% spin polarization.

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INTERMAG 2006 - IEEE International Magnetics Conference

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