多级2单元t-write代码

2012 IEEE Information Theory Workshop Pub Date : 2012-09-01 DOI:10.1109/ITW.2012.6404668

A. Bhatia, Aravind R. Iyengar, P. Siegel

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引用次数: 13

摘要

我们将t-write代码用于一次性写入存储器，这些存储器具有可存储多个级别的单元格。对于连续水平的渐近情况，我们使用最坏情况和速率最优2-cell t-write代码结构，我们推导出2-cell t-write代码结构，为支持q个离散水平的细胞提供良好的和速率。给出了q级2单元t-write码的通用编码方案。

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Multilevel 2-cell t-write codes

We consider t-write codes for write-once memories with cells that can store multiple levels. Using worst-case sum-rate optimal 2-cell t-write code constructions for the asymptotic case of continuous levels, we derive 2-cell t-write code constructions that give good sum-rates for cells that support q discrete levels. A general encoding scheme for q-level 2-cell t-write codes is provided.

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2012 IEEE Information Theory Workshop

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