表面等离子体增强半导体纳米线强激子-光子耦合

Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XIX Pub Date : 2021-08-01 DOI:10.1117/12.2594566

Qing Zhang

{"title":"表面等离子体增强半导体纳米线强激子-光子耦合","authors":"Qing Zhang","doi":"10.1117/12.2594566","DOIUrl":null,"url":null,"abstract":"Exploring exciton-polariton effects in low dimensional semiconductors with large oscillation strength provides solutions to develop low threshold lasers and low-energy consumption, fast photonic interconnections. In this talk, I will introduce our recent results on surface plasmon enhanced exciton-polariton of perovskite nanowires. We find that Rabi splitting energy of MAPbBr3 nanowires is enhanced by 40% by adopting a semiconductor nanwire/dielectric/Ag film sandwich structure. A Rabi splitting energy up to 595 meV is achieved as the dielectric thickness is 5 nm. Later, we demonstrated a room temperature, low-threshold green plasmonic laser in the same configuration.","PeriodicalId":118068,"journal":{"name":"Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XIX","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Surface plasmon enhanced strong exciton-photon coupling of semiconductor nanowires\",\"authors\":\"Qing Zhang\",\"doi\":\"10.1117/12.2594566\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Exploring exciton-polariton effects in low dimensional semiconductors with large oscillation strength provides solutions to develop low threshold lasers and low-energy consumption, fast photonic interconnections. In this talk, I will introduce our recent results on surface plasmon enhanced exciton-polariton of perovskite nanowires. We find that Rabi splitting energy of MAPbBr3 nanowires is enhanced by 40% by adopting a semiconductor nanwire/dielectric/Ag film sandwich structure. A Rabi splitting energy up to 595 meV is achieved as the dielectric thickness is 5 nm. Later, we demonstrated a room temperature, low-threshold green plasmonic laser in the same configuration.\",\"PeriodicalId\":118068,\"journal\":{\"name\":\"Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XIX\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XIX\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2594566\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XIX","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2594566","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

探索具有大振荡强度的低维半导体中的激子-极化子效应为开发低阈值激光器和低能耗、快速光子互连提供了解决方案。在这次演讲中，我将介绍我们最近在钙钛矿纳米线表面等离子体增强激子极化子方面的研究成果。研究发现，采用半导体纳米线/介电介质/银膜夹层结构，MAPbBr3纳米线的Rabi分裂能提高40%。当介质厚度为5 nm时，可获得高达595 meV的拉比分裂能量。后来，我们展示了室温，低阈值绿色等离子体激光器在相同的配置。

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Surface plasmon enhanced strong exciton-photon coupling of semiconductor nanowires

Exploring exciton-polariton effects in low dimensional semiconductors with large oscillation strength provides solutions to develop low threshold lasers and low-energy consumption, fast photonic interconnections. In this talk, I will introduce our recent results on surface plasmon enhanced exciton-polariton of perovskite nanowires. We find that Rabi splitting energy of MAPbBr3 nanowires is enhanced by 40% by adopting a semiconductor nanwire/dielectric/Ag film sandwich structure. A Rabi splitting energy up to 595 meV is achieved as the dielectric thickness is 5 nm. Later, we demonstrated a room temperature, low-threshold green plasmonic laser in the same configuration.

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Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XIX

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