基于硅衬底的1.55微米介电镜倒装衬底发射InAlGaAs vcsel的热分析与性能

COIN-NGNCON 2006 - The Joint International Conference on Optical Internet and Next Generation Network Pub Date : 2006-07-09 DOI:10.1109/COINNGNCON.2006.4454655

J.D. Kim, H. Song, W. Han, B. Y. Yun

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摘要

本文对单步MOCVD生长的1.55 um底发射InAlGaAs vcsel结构进行了模拟和测量，并通过有源尺寸对其进行了热分析，以优化其在si衬底上倒装键合组装的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Thermal Analysis and Performance in 1.55um Bottom-emitting InAlGaAs VCSELs with Dielectric Mirror, Flip-chip Bonded on Si-Substrate

A novel structure of 1.55 um bottom-emitting InAlGaAs VCSELs grown by single-step MOCVD has been thermally analyzed in simulation and measurement through active sizes, to be optimized the performances for the flip-chip bonded assembly on Si-substrate.

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COIN-NGNCON 2006 - The Joint International Conference on Optical Internet and Next Generation Network

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