一个17.1到17.3 GHz的图像抑制下变频器，具有相位可调的LO，使用3/spl次/次谐波注入锁定

2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519) Pub Date : 2004-09-13 DOI:10.1109/ISSCC.2004.1332757

S.Y. Yue, D. Ma, J. Long, B. Jagannathan, D. Harame

{"title":"一个17.1到17.3 GHz的图像抑制下变频器，具有相位可调的LO，使用3/spl次/次谐波注入锁定","authors":"S.Y. Yue, D. Ma, J. Long, B. Jagannathan, D. Harame","doi":"10.1109/ISSCC.2004.1332757","DOIUrl":null,"url":null,"abstract":"A 17 GHz RF receiver consisting of an LNA and doubly-balanced mixers coupled by a monolithic 3.7:1 step-down transformer realizes over 70 dB of image-rejection in a 100 GHz-f/sub T/ SiGe BiCMOS technology. Quadrature LO signals are generated with electronically tunable phase from a subharmonically injection-locked oscillator. The measured IIP3 is -5.1 dBm with 17.3 dB conversion gain and 6.5 dB NF (SSB, 50 /spl Omega/) at 17.2 GHz. The 1.9/spl times/1.0 mm/sup 2/ IC consumes 62.5 mW from a 2.2 V supply.","PeriodicalId":273317,"journal":{"name":"2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"A 17.1 to 17.3 GHz image-reject down-converter with phase-tunable LO using 3/spl times/ subharmonic injection locking\",\"authors\":\"S.Y. Yue, D. Ma, J. Long, B. Jagannathan, D. Harame\",\"doi\":\"10.1109/ISSCC.2004.1332757\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 17 GHz RF receiver consisting of an LNA and doubly-balanced mixers coupled by a monolithic 3.7:1 step-down transformer realizes over 70 dB of image-rejection in a 100 GHz-f/sub T/ SiGe BiCMOS technology. Quadrature LO signals are generated with electronically tunable phase from a subharmonically injection-locked oscillator. The measured IIP3 is -5.1 dBm with 17.3 dB conversion gain and 6.5 dB NF (SSB, 50 /spl Omega/) at 17.2 GHz. The 1.9/spl times/1.0 mm/sup 2/ IC consumes 62.5 mW from a 2.2 V supply.\",\"PeriodicalId\":273317,\"journal\":{\"name\":\"2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2004.1332757\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2004.1332757","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 16

摘要

由LNA和双平衡混频器组成的17 GHz射频接收器，通过单片3.7:1降压变压器耦合，在100 GHz-f/sub T/ SiGe BiCMOS技术下实现超过70 dB的图像抑制。正交LO信号是由亚谐波注入锁定振荡器产生的电子可调相位信号。测量到的IIP3为-5.1 dBm, 17.3 dB转换增益和6.5 dB NF (SSB, 50 /spl ω /)在17.2 GHz。1.9/spl倍/1.0 mm/sup 2/ IC从2.2 V电源消耗62.5 mW。

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A 17.1 to 17.3 GHz image-reject down-converter with phase-tunable LO using 3/spl times/ subharmonic injection locking

A 17 GHz RF receiver consisting of an LNA and doubly-balanced mixers coupled by a monolithic 3.7:1 step-down transformer realizes over 70 dB of image-rejection in a 100 GHz-f/sub T/ SiGe BiCMOS technology. Quadrature LO signals are generated with electronically tunable phase from a subharmonically injection-locked oscillator. The measured IIP3 is -5.1 dBm with 17.3 dB conversion gain and 6.5 dB NF (SSB, 50 /spl Omega/) at 17.2 GHz. The 1.9/spl times/1.0 mm/sup 2/ IC consumes 62.5 mW from a 2.2 V supply.

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来源期刊

2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)

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