基于宽带透明相变材料的多级非易失性光子存储器

Jiawei Meng, M. Miscuglio, V. Sorger
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引用次数: 4

摘要

在这里,我们展示了一种使用宽带透明相变材料(GeSbSe)的低损耗多态光子存储器,该存储器可以在片上有效地重新编程。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Multi-level Nonvolatile Photonic Memories Using Broadband Transparent Phase change materials
Here we demonstrate a low-loss multi-state photonic memory using broadband transparent phase change materials (GeSbSe), which can be efficiently reprogrammed on-chip.
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