{"title":"基于宽带透明相变材料的多级非易失性光子存储器","authors":"Jiawei Meng, M. Miscuglio, V. Sorger","doi":"10.1364/FIO.2020.FW7D.6","DOIUrl":null,"url":null,"abstract":"Here we demonstrate a low-loss multi-state photonic memory using broadband transparent phase change materials (GeSbSe), which can be efficiently reprogrammed on-chip.","PeriodicalId":171489,"journal":{"name":"Frontiers in Optics / Laser Science","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Multi-level Nonvolatile Photonic Memories Using Broadband Transparent Phase change materials\",\"authors\":\"Jiawei Meng, M. Miscuglio, V. Sorger\",\"doi\":\"10.1364/FIO.2020.FW7D.6\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Here we demonstrate a low-loss multi-state photonic memory using broadband transparent phase change materials (GeSbSe), which can be efficiently reprogrammed on-chip.\",\"PeriodicalId\":171489,\"journal\":{\"name\":\"Frontiers in Optics / Laser Science\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Frontiers in Optics / Laser Science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/FIO.2020.FW7D.6\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Frontiers in Optics / Laser Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/FIO.2020.FW7D.6","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Multi-level Nonvolatile Photonic Memories Using Broadband Transparent Phase change materials
Here we demonstrate a low-loss multi-state photonic memory using broadband transparent phase change materials (GeSbSe), which can be efficiently reprogrammed on-chip.