FinFET技术中二极管触发可控硅整流器的设计与优化

2020 International EOS/ESD Symposium on Design and System (IEDS) Pub Date : 2021-06-23 DOI:10.23919/IEDS48938.2021.9468824

M. Miao, You Li, Wei Liang, R. Gauthier

{"title":"FinFET技术中二极管触发可控硅整流器的设计与优化","authors":"M. Miao, You Li, Wei Liang, R. Gauthier","doi":"10.23919/IEDS48938.2021.9468824","DOIUrl":null,"url":null,"abstract":"Diode trigger SCR (DTSCR) structure is introduced in FinFET technology for low voltage circuit ESD protection. The current direction is chosen to flow vertically down through the fins to make full use of the bulk silicon region. Further optimization of DTSCR is investigated to improve layout efficiency.","PeriodicalId":174954,"journal":{"name":"2020 International EOS/ESD Symposium on Design and System (IEDS)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Design and Optimization of Diode Triggered Silicon Controlled Rectifier in FinFET Technology\",\"authors\":\"M. Miao, You Li, Wei Liang, R. Gauthier\",\"doi\":\"10.23919/IEDS48938.2021.9468824\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Diode trigger SCR (DTSCR) structure is introduced in FinFET technology for low voltage circuit ESD protection. The current direction is chosen to flow vertically down through the fins to make full use of the bulk silicon region. Further optimization of DTSCR is investigated to improve layout efficiency.\",\"PeriodicalId\":174954,\"journal\":{\"name\":\"2020 International EOS/ESD Symposium on Design and System (IEDS)\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-06-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International EOS/ESD Symposium on Design and System (IEDS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/IEDS48938.2021.9468824\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International EOS/ESD Symposium on Design and System (IEDS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/IEDS48938.2021.9468824","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

在FinFET技术中引入了二极管触发可控硅(DTSCR)结构，用于低压电路ESD保护。电流方向选择垂直向下流过鳍片，以充分利用大块硅区。为了提高布局效率，研究了进一步优化DTSCR的方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Design and Optimization of Diode Triggered Silicon Controlled Rectifier in FinFET Technology

Diode trigger SCR (DTSCR) structure is introduced in FinFET technology for low voltage circuit ESD protection. The current direction is chosen to flow vertically down through the fins to make full use of the bulk silicon region. Further optimization of DTSCR is investigated to improve layout efficiency.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2020 International EOS/ESD Symposium on Design and System (IEDS)

自引率

0.00%

发文量