减少嵌入式ram的测试时间

Baosheng Wang, Josh Yang, A. Ivanov
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引用次数: 12

摘要

与传统的功能故障模型相比,从电感故障分析(IFA)测试流程中获得的故障模型可以为从缺陷水平和成品率方面获得对整体测试质量的良好估计提供有吸引力的基础。然而,随着SRAM容量的增加,测试时间的增加成为测试独立或嵌入式SRAM的主要挑战。本文对嵌入式sram缺陷仿真转化而来的功能故障模型进行了改进,提出并描述了IFA。重新考虑功能故障的缺陷原因,我们可以简化功能故障模型FFM2,并制定检测Data Retention fault所需的测试时间。我们将这种简化与特定内存冗余元素的考虑结合起来,开发了一种新的March 6N Test算法。仿真结果表明,本文提出的故障建模和测试生成算法可以在保持相同缺陷和故障覆盖率的情况下,将总测试时间减少到方法所需时间的一半或更少。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Reducing test time of embedded SRAMs
Compared with traditional functional fault models, fault model obtained from an Inductive Fault Analysis (IFA) test flow can provide an attractive basis for obtaining a good estimate of the overall test quality in terms of defect level and yield. However, the associated surging test time due to increased SRAM capacity is becoming a major challenge when testing either standalone or embedded SRAMs. This paper refines the functional fault models translated from defect simulations for embedded SRAMs with IFA proposed and described. Reconsidering the defect causes of the functional faults allows us to simplify the functional fault model FFM2 and formulate the test time required for detecting Data Retention Faults. We combine this simplification with the consideration of specific memory redundancy elements to develop a new March 6N Test algorithm. Simulation results reveal that our proposed fault modeling and test generation algorithm can reduce total test time to one half or less of that required by the methodology, while maintaining the same defect and fault coverage.
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