采用130纳米CMOS工艺,Vdd为1.2V的高速低功耗真单相时钟除以16/17双模预分频器

N. Hemapradhap, J. Ajayan
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引用次数: 2

摘要

本文采用350nm、250nm、180nm和130nm的CMOS技术,分析了高速CMOS TSPC / 16/17双模预分频器的性能。在这项工作中,用于350nm技术的电源电压(Vdd)为3.3V,用于250nm的电源电压为2.5V,用于180nm和130nm技术的电源电压为1.2V。采用TSPC d - flip - flop构造了除16/17双模预分频器。实验结果表明,在1.2V电源下,采用130nm CMOS技术实现的CMOS TSPC / 16/17双模预分频器工作频率可达6GHz,最大工作频率功耗为1.4mW。仿真结果表明,采用1.2V Vdd的130nm CMOS工艺实现的CMOS TSPC除以16/17双模预分频器比采用1.6V Vdd的180nm CMOS工艺实现的CMOS TSPC除以16/17双模预分频器功耗降低40%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High speed low-power true single-phase clock divide-by-16/17 dual-modulus prescaler using 130nm CMOS process with a Vdd of 1.2V
In this paper, the performance of a high speed CMOS TSPC divide-by-16/17 dual modulus prescaler is analyzed using 350nm, 250nm, 180nm and 130nm CMOS technologies. In this work, the supply voltage (Vdd) used for 350nm technology is 3.3V, the Vdd used for 250nm is 2.5V and a 1.2V supply for both 180nm and 130nm technologies. The divide-by-16/17 dual modulus prescaler is constructed using TSPC D-Flip-Flops. The experimental result shows that, the CMOS TSPC divide-by-16/17 dual modulus prescaler implemented using 130nm CMOS technology with a supply voltage of 1.2V is capable of operating up to 6GHz frequency and power consumption is 1.4mW at the maximum operating frequency under 1.2V supply. The simulation result shows that CMOS TSPC divide-by-16/17 dual modulus prescaler implemented using 130nm CMOS process with 1.2V Vdd reduces the power consumption by 40% compared to 180nm CMOS process with 1.6V Vdd.
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