A Multi-Level Simulation of GeH FETs: From Nanomaterial and Device Characteristics to Circuit Performance Optimization

Here, we demonstrate a multi-level simulation for 2D material-based nanoelectronics, including material parameterization, device simulation, physics-based compact modeling, and circuit benchmark. We perform quantum transport simulations based on the Non-equilibrium Green's Function (NEGF) method to calculate the characteristics of two-dimensional (2D) GeH field-effect transistors (FETs). We have developed a compact model by modifying the original virtual source (VS) model to capture the unique behaviors of 2D-material FETs such as voltage-dependent VS velocity and quantum capacitance. HSPICE circuit simulation is then conducted for circuit analyses and optimization of CMOS digital benchmark circuits. Our simulation results show that energy-delay product can be lowered by 50 times if power supply and threshold voltages are properly engineered. This study not only provides a seamless multi-level simulation process to fill a gap between the properties of nanomaterials and the behavior of circuits based on novel FETs, but also advances in-depth understanding of material, device and circuit in a comprehensive manner. It is expected that the suggested approach could be further extended to a framework for 2D material-device-circuit co-optimization processes.