{"title":"HD-FOWLP技术中高带宽存储器和高级接口总线接口的电气设计挑战","authors":"M. D. Rotaru, Li Kangrong","doi":"10.1109/ECTC32696.2021.00063","DOIUrl":null,"url":null,"abstract":"Wide and slow bus interfaces such as High Bandwidth Memory (HBM) and Advanced Interface Bus (AIB) are the main drivers behind the development and implementation of technologies such as Embedded Multi-die Interconnect Bridge (EMIB) and Chip-on-Wafer-on-Substrate (CoWoS). These technologies can create very dense interconnect structures using back end of line (BEOL) approaches used to interconnect chiplets and to form functional system in package applications. With recent improvements in fabrication and process technologies organic based high density redistribution layer approaches such HD-FOWLP have become popular alternatives to EMIB and CoWoS. Redistribution layers with $2\\text{um}\\times 2\\text{um}$ cross section and 2um space between adjacent lines or $1\\text{um}\\times 1\\text{um}$ cross section with a minimum spacing of 1um have become achievable with the current fabrication technology. In this work the electrical design challenges in organic based fine RDL packages have been studied via simulation and electrical measurements.","PeriodicalId":351817,"journal":{"name":"2021 IEEE 71st Electronic Components and Technology Conference (ECTC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Electrical design challenges in High Bandwidth Memory and Advanced Interface Bus interfaces on HD-FOWLP technology\",\"authors\":\"M. D. Rotaru, Li Kangrong\",\"doi\":\"10.1109/ECTC32696.2021.00063\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Wide and slow bus interfaces such as High Bandwidth Memory (HBM) and Advanced Interface Bus (AIB) are the main drivers behind the development and implementation of technologies such as Embedded Multi-die Interconnect Bridge (EMIB) and Chip-on-Wafer-on-Substrate (CoWoS). These technologies can create very dense interconnect structures using back end of line (BEOL) approaches used to interconnect chiplets and to form functional system in package applications. With recent improvements in fabrication and process technologies organic based high density redistribution layer approaches such HD-FOWLP have become popular alternatives to EMIB and CoWoS. Redistribution layers with $2\\\\text{um}\\\\times 2\\\\text{um}$ cross section and 2um space between adjacent lines or $1\\\\text{um}\\\\times 1\\\\text{um}$ cross section with a minimum spacing of 1um have become achievable with the current fabrication technology. In this work the electrical design challenges in organic based fine RDL packages have been studied via simulation and electrical measurements.\",\"PeriodicalId\":351817,\"journal\":{\"name\":\"2021 IEEE 71st Electronic Components and Technology Conference (ECTC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE 71st Electronic Components and Technology Conference (ECTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECTC32696.2021.00063\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 71st Electronic Components and Technology Conference (ECTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC32696.2021.00063","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical design challenges in High Bandwidth Memory and Advanced Interface Bus interfaces on HD-FOWLP technology
Wide and slow bus interfaces such as High Bandwidth Memory (HBM) and Advanced Interface Bus (AIB) are the main drivers behind the development and implementation of technologies such as Embedded Multi-die Interconnect Bridge (EMIB) and Chip-on-Wafer-on-Substrate (CoWoS). These technologies can create very dense interconnect structures using back end of line (BEOL) approaches used to interconnect chiplets and to form functional system in package applications. With recent improvements in fabrication and process technologies organic based high density redistribution layer approaches such HD-FOWLP have become popular alternatives to EMIB and CoWoS. Redistribution layers with $2\text{um}\times 2\text{um}$ cross section and 2um space between adjacent lines or $1\text{um}\times 1\text{um}$ cross section with a minimum spacing of 1um have become achievable with the current fabrication technology. In this work the electrical design challenges in organic based fine RDL packages have been studied via simulation and electrical measurements.