GaN-Based Low-Voltage Inverter for Electric Scooter Drive System

The paper deals with the application of the latest generation low voltage (up to 80V) Gallium Nitride (GaN) devices for motor drive applications in the field of electric micro-mobility. A two-level inverter topology oriented to light electric traction (such as electric scooters) with a power rate of 1500W has been considered. An experimental board using two GaN FETs in parallel connection for each switch of an inverter leg has been arranged. The intrinsic parameters spread of the device, as well as the leakage inductances of both the circuit and the PCB, to evaluate the impact on the current share during both the transient phase and in the steady state have been investigated. In the paper, several simulation runs have been carried out and described. Furthermore, the inverter experimental board has been used to evaluate the phase voltages and currents at different load conditions. Finally, the temperature limits versus phase current variation have been evaluated.