Arjun Kumar, Prabhakar Tripathi, S. Dwivedi, P. K. Jain
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Simulation Investigation of S/Ku dual-band magnetically insulated line Oscillator
A dual-band Magnetically insulated line oscillator (MILO) generating RF in S-band and Ku-band has been presented. The standard device design methodology has been followed for design and validated through simulation. The dispersion diagram for both S-band and Ku -band calculated through EIGEN mode simulation. For the PIC simulation of the device, typically selected beam parameters: diode voltage of 610 kV and diode current of 58 kA, generates the RF of 3.1 GW at frequency 14.1 GHz and RF of 1.2 GW at frequency 2.1 GHz. The overall efficiency of ~12.1 % has been achieved through the device with frequency difference of 8.4 dB.
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